AMAT ENDURA TXZ is a device chamber or model under Applied Materials' Endura platform that is primarily used in processes such as physical vapor deposition (PVD) in semiconductor manufacturing. Here is some information about it:

Chamber configurations: Common configurations include ch-1 as IMP chamber, ch-2 and ch-3 as HP + TXZ chamber, ch-c as Preclean II chamber, ch-e and f as Orient Degas chamber, etc.

Technical features: The use of advanced technology, such as equipped with ultra-high vacuum system, can precisely control the process environment, reduce impurity pollution; Advanced plasma generation and control system for efficient and uniform film deposition; Precise temperature control and gas flow control systems ensure process stability and repeatability.

Application: Mainly used in semiconductor manufacturing field, can be used for a variety of metal materials and barrier/seed layer deposition, such as copper, aluminum, tungsten and other metals deposition, as well as tantalum, titanium and other barrier and seed layer deposition, to meet the needs of different semiconductor processes, suitable for logic chip, DRAM, NAND and other types of chip manufacturing

Here are some models and information about the AMAT ENDURA TXZ:

Endura 5500: This is a model for the AMAT Endura platform and is part of Applied Materials' PVD line of devices along with the ENDURA TXZ. Such as "5500 ENDURA CU BARRIER/SEED (300/CLASSIC)" and "5500 ENDURA C4 SPUTTER - 1DG, 1PCXT, 1Ti, 1Cu (300/Classic)", etc. Suitable for copper barrier/seed deposition and C4 sputtering processes in 300mm wafers.

Endura II TXZ 300mm ISAC Tower: The model number 0010-30322 is a derivative or related configuration of the ENDURA TXZ, which may have specific structural or functional improvements or application scenarios for the process processing of 300mm wafers, involving ISAC Tower (which may be a specific gas delivery or reaction chamber structure) related technology.