ABB 5SHY3545L0009/3BHB013085R0001

Title: ABB 5 shy3545l0009/3 bhb013085r0001 IGCT module: efficient and reliable electric control components

High efficiency power conversion: Combining the advantages of transistor stable turn-off ability and thyristor low on-state loss, thyristor performance is played in the on-phase, and transistor characteristics are displayed in the off phase to achieve low on-phase and commutation loss. High switching speed defined by slow on-off loss can be achieved, and direct series connection can be achieved with small buffer to improve power conversion efficiency.

Precise control: Through the precise control of the gate signal, accurate phase control can be achieved to ensure the balance and stability of the phase current in the power system. It has good current sharing characteristic when multiple devices are applied in parallel, and the current distribution between devices is uniform.

High reliability: The use of semiconductor compression shell, with high reliability, very good thermal cycling performance. In fault mode, it is short-circuited, and 1+1 redundancy can be achieved with additional IGCT to further improve reliability.

Easy to use: supports a variety of communication protocols and interfaces, can be seamlessly connected and integrated with other industrial automation equipment, but also supports programmable control and parameter Settings, easy for users to customize and develop.

ABB 5SGY3545L0009/3BHL000986P3004

Title: ABB 5 sgy3545l0009/3 bhl000986p3004 IGCT module: high-performance power regulating the key device

High power processing: can handle large current, suitable for high power power regulation, rectification and frequency conversion speed regulation and other fields, to meet the industrial power system, drive control and other requirements for high power control and regulation. For example, in the variable frequency speed regulation system of large motor, sufficient power support can be provided to achieve smooth speed regulation of the motor.

Fast switching: With fast switching ability, the switching action can be completed in a short time to meet the requirements of high-frequency power conversion. In some circuits that need to quickly switch current paths, such as high-frequency inverters, they can quickly respond to control signals and achieve efficient power conversion.

Perfect protection: Built-in over current, over voltage and over temperature protection functions, can quickly detect abnormal conditions in the power system, and quickly take protective measures, such as cutting off the fault circuit, to protect equipment and personnel safety, improve system stability and security.

Optimized switching characteristics: Improved GTO switching characteristics allow for dv/dt buffered operation at high current density, reducing on-off and off-off losses. Reduced gate drive requirements by optimizing silicon thickness, especially during on-off. Anti-parallel diode that can be turned off without buffer at high voltages for high frequency operation under continuous and dynamic di/dt conditions.

High reliability and power expansion: Increased reliability per MVA by reducing the complexity and number of components. The power range is extended to 100MVA with efficient and reliable series and parallel connections